| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 9 | |
| 100 | |
| 1 | |
| 32@10V | |
| 13@4.5V|25@10V | |
| 25 | |
| 5.5 | |
| 3.5 | |
| 17 | |
| 1006@15V | |
| 145@15V | |
| 1 | |
| 180 | |
| 2500 | |
| 9|11 | |
| 13|89 | |
| 22|23 | |
| 10|38 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 26@10V|37@4.5V | |
| 2.5 | |
| 30 | |
| 95 | |
| 0.71 | |
| 3.2 | |
| 22 | |
| 1.2 | |
| 0.4 | |
| 4 | |
| 20 | |
| 7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI4431CDY-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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