| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 29 | |
| 5@10V | |
| 129@10V|61@4.5V | |
| 129 | |
| 23.5 | |
| 16.5 | |
| 74 | |
| 6000@15V | |
| 860 | |
| 3500 | |
| 40|20 | |
| 130|16 | |
| 60|80 | |
| 75|16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.2@4.5V|3.9@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, SI4459ADY-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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