| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.4 | |
| -55 to 150 | |
| 9.8 | |
| 100 | |
| 1 | |
| 11@10V | |
| 37@4.5V | |
| 11 | |
| 8.7 | |
| 0.6 | |
| 800 | |
| 3000 | |
| 75 | |
| 60 | |
| 115 | |
| 35 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8.5@10V|10@4.5V|15@2.5V | |
| 12 | |
| 13.7 | |
| 3 | |
| 50 | |
| 84 | |
| 0.7 | |
| 2.1 | |
| 50 | |
| 1.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4463BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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