| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 26.6 | |
| 6.2@4.5V | |
| 59@4.5V|125@10V | |
| 125 | |
| 4600@10V | |
| 3000 | |
| 42 | |
| 42 | |
| 100 | |
| 42 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI4477DY-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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