| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N|P | |
| 2 | |
| 60 | |
| ±20 | |
| 5.3@N Channel|3.9@P Channel | |
| 58@10V@N Channel|120@10V@P Channel | |
| 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel | |
| 13@N Channel|14.5@P Channel | |
| 665@15V@N Channel|650@15V@P Channel | |
| 2000 | |
| 10@N Channel|30@P Channel | |
| 65|15@N Channel|70|13@P Channel | |
| 15|20@N Channel|40|35@P Channel | |
| 15|10@N Channel|30|10@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this SI4559ADY-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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