| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N|P | |
| 2 | |
| 40 | |
| ±16@N Channel|±20@P Channel | |
| 2@N Channel|2.5@P Channel | |
| -55 to 150 | |
| 10@N Channel|9.2@P Channel | |
| 100 | |
| 1 | |
| 17.5@10V@N Channel|21@10V@P Channel | |
| 20.5@10V|9.8@4.5V@N Channel|41.5@10V|21.7@4.5V@P Channel | |
| 20.5@N Channel|41.5@P Channel | |
| 2.6@N Channel|9.8@P Channel | |
| 2.6@N Channel|5.6@P Channel | |
| 10@N Channel|26@P Ch | |
| 855@20V@N Channel|2000@20V@P Channel | |
| 202@20V@P Channel|48@20V@N Channel | |
| 0.8@N Channel|1.2@P Channel | |
| 120@N Channel|240@P Channel | |
| 2000 | |
| 9|13@N Channel|14|15@P Channel | |
| 10|15@N Channel|9|40@P Channel | |
| 18|23@N Channel|50|40@P Channel | |
| 7|11@N Channel|9|42@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 17@4.5V|14.5@10V@N Channel|23.2@4.5V|17.5@10V@P Channel | |
| 2 | |
| 40 | |
| 120@N Channel|110@P Channel | |
| 0.77@P Channel|0.74@N Channel | |
| 2.2@N Channel|2.8@P Channel | |
| 17@N Channel|30@P Ch | |
| 1.2 | |
| 0.3@N Channel|1.3@P Channel | |
| 12.8@P Channel|3@N Channel | |
| 16|20 | |
| 8@N Channel|7.2@P Channel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the SI4564DY-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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