| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 2.5 | |
| 14.9 | |
| 12.5@10V | |
| 29.5@4.5V|57@10V | |
| 57 | |
| 22 | |
| 8 | |
| 16 | |
| 2550@15V | |
| 455 | |
| 2700 | |
| 9|19 | |
| 12|92 | |
| 40|34 | |
| 13|48 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10@10V|16.5@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4825DDY-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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