| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 3 | |
| -55 to 150 | |
| 13 | |
| 100 | |
| 1 | |
| 18@10V | |
| 22@4.5V|43@10V | |
| 43 | |
| 11 | |
| 6 | |
| 20 | |
| 1960@15V | |
| 325@15V | |
| 1 | |
| 380 | |
| 2500 | |
| 9|15 | |
| 13|100 | |
| 32|28 | |
| 11|44 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 14@10V|24.5@4.5V | |
| 2.5 | |
| 50 | |
| 85 | |
| 0.75 | |
| 3.2 | |
| 28 | |
| 1.2 | |
| 0.3 | |
| 2.5 | |
| 25 | |
| 8.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SI4835DDY-T1-E3 power MOSFET is for you. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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