| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 19 | |
| 100 | |
| 1 | |
| 9@10V | |
| 15@4.5V|33@10V | |
| 33 | |
| 5.1 | |
| 6.7 | |
| 26 | |
| 2000@20V | |
| 150@20V | |
| 1 | |
| 260 | |
| 2500 | |
| 10 | |
| 12|15 | |
| 25|30 | |
| 25|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.4@10V|9.5@4.5V | |
| 2.5 | |
| 50 | |
| 85 | |
| 0.8 | |
| 3.6 | |
| 30 | |
| 1.2 | |
| 2.1 | |
| 20 | |
| 12.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4840BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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