| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| -55 to 150 | |
| 6.7 | |
| 100 | |
| 1 | |
| 16.5@10V | |
| 34@10V | |
| 34 | |
| 11 | |
| 7.5 | |
| 2 | |
| 220 | |
| 3100 | |
| 31 | |
| 11 | |
| 40 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 50 | |
| 0.75 | |
| 45 | |
| 1.1 | |
| 0.2 | |
| 1.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI4896DY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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