| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 12 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 6.7 | |
| 100 | |
| 1 | |
| 18@4.5V | |
| 34.5@4.5V | |
| 9.6 | |
| 5.1 | |
| 0.4 | |
| 2000 | |
| 155 | |
| 46 | |
| 230 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 14.5@4.5V|18@2.5V|23@1.8V | |
| 8 | |
| 6.7 | |
| 2000 | |
| 30 | |
| 110 | |
| 1.5 | |
| 128 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI4931DY-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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