| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 6.9 | |
| 100 | |
| 1 | |
| 35@10V | |
| 4.5@4.5V|9.1@10V | |
| 9.1 | |
| 1.7 | |
| 1.8 | |
| 12 | |
| 530@15V | |
| 55@15V | |
| 1.5 | |
| 100 | |
| 2000 | |
| 32|10 | |
| 130|25 | |
| 12 | |
| 20|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 29@10V|42@4.5V | |
| 2 | |
| 30 | |
| 110 | |
| 0.8 | |
| 3.7 | |
| 20 | |
| 1.2 | |
| 20 | |
| 5.9 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4936BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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