| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 2.4 | |
| 100 | |
| 1 | |
| 120@10V | |
| 14.5@10V | |
| 14.5 | |
| 3.7 | |
| 2.2 | |
| 1 | |
| 60 | |
| 2400 | |
| 35 | |
| 15 | |
| 50 | |
| 10 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 100@10V|126@4.5V | |
| 2.4 | |
| 25 | |
| 110 | |
| 0.8 | |
| 3.1 | |
| 30 | |
| 1.2 | |
| 20 | |
| 3.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4948BEY-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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