| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 4 | |
| 100 | |
| 1 | |
| 65@10V | |
| 2@4.5V|4.5@10V | |
| 4.5 | |
| 0.7 | |
| 0.7 | |
| 20 | |
| 220@15V | |
| 25@15V | |
| 1.5 | |
| 50 | |
| 1500 | |
| 25|5 | |
| 80|12 | |
| 10|12 | |
| 4|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 53@10V|81@4.5V | |
| 1.5 | |
| 10 | |
| 120 | |
| 0.8 | |
| 3.25 | |
| 30 | |
| 1.2 | |
| 20 | |
| 3.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 |
Use Vishay's SI5902BDC-T1-E3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.

