| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 4 | |
| 100 | |
| 1 | |
| 100@4.5V | |
| 6.2@4.5V|7@5V | |
| 1.75 | |
| 0.85 | |
| 13 | |
| 455@10V | |
| 54@10V | |
| 0.4 | |
| 70 | |
| 1300 | |
| 6 | |
| 32 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 130@1.8V|100@2.5V|83@4.5V | |
| 1.3 | |
| 10 | |
| 130 | |
| 0.8 | |
| 1.4 | |
| 21 | |
| 1.2 | |
| 1.22 | |
| 12.2 | |
| 8 | |
| 3.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 | |
| Leitungsform | Flat |
Compared to traditional transistors, SI5935CDC-T1-E3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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