| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 4 | |
| 100 | |
| 1 | |
| 100@4.5V | |
| 6.2@4.5V|7@5V | |
| 1.75 | |
| 0.85 | |
| 13 | |
| 455@10V | |
| 54@10V | |
| 0.4 | |
| 70 | |
| 1300 | |
| 6 | |
| 32 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 130@1.8V|100@2.5V|83@4.5V | |
| 1.3 | |
| 10 | |
| 130 | |
| 0.8 | |
| 1.4 | |
| 21 | |
| 1.2 | |
| 1.22 | |
| 12.2 | |
| 8 | |
| 3.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05 |
| Verpackungsbreite | 1.65 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 | |
| Leitungsform | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI5935CDC-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.