| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 6 | |
| 100 | |
| 1 | |
| 30@10V | |
| 3.5@4.5V|7@10V | |
| 7 | |
| 320@15V | |
| 2300 | |
| 10 | |
| 65 | |
| 15 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.8(Max) |
| Verpackungsbreite | 1.9 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK ChipFET |
| 8 | |
| Leitungsform | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI5936DU-T1-GE3 power MOSFET. Its maximum power dissipation is 2300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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