| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Quad Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 1(Min) | |
| 6.5 | |
| 19@10V | |
| 47@10V | |
| 47 | |
| 8 | |
| 9.5 | |
| 450 | |
| 1500 | |
| 31 | |
| 17 | |
| 73 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 15@10V|22@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 3 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSSOP |
| 8 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SI6415DQ-T1-GE3 power MOSFET. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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