| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Common Drain Dual Source | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 5.2 | |
| 22@4.5V | |
| 12@4.5V | |
| 1000 | |
| 510 | |
| 330 | |
| 860 | |
| 245 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSSOP |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this SI6968BEDQ-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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