| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±12 | |
| 1.5 | |
| 11.3 | |
| 100 | |
| 1 | |
| 7.5@10V | |
| 18@4.5V | |
| 3.1 | |
| 6.2 | |
| 18 | |
| 2610@15V | |
| 340 | |
| 1500 | |
| 10 | |
| 10 | |
| 65 | |
| 10 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 6@10V|6.5@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SI7112DN-T1-E3 power MOSFET. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C.
| EDA / CAD Models |
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