| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 35 | |
| 7.5@10V | |
| 10.2@4.5V|21@10V | |
| 21 | |
| 3.2 | |
| 3.9 | |
| 20 | |
| 1230@15V | |
| 275 | |
| 3700 | |
| 10 | |
| 20 | |
| 20 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.2@10V|8.1@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI7114ADN-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 3700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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