VishaySI7115DN-T1-GE3MOSFETs
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| 8.9 | |
| 295@10V | |
| 23.2@6V|27.5@10V | |
| 27.5 | |
| 1190@50V | |
| 3700 | |
| 34|35 | |
| 95|28 | |
| 38|52 | |
| 11|20 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7115DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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