| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.4 | |
| -55 to 150 | |
| 42 | |
| 100 | |
| 1 | |
| 1.95@10V | |
| 188@4.5V|390@10V | |
| 390 | |
| 46 | |
| 33.6 | |
| 105 | |
| 20000@10V | |
| 2650@10V | |
| 0.5 | |
| 2150 | |
| 6250 | |
| 110 | |
| 150 | |
| 230 | |
| 100 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.6@10V|3.1@2.5V|2@4.5V | |
| 6.25 | |
| 100 | |
| 54 | |
| 0.64 | |
| 1.8 | |
| 88 | |
| 1.1 | |
| 0.9 | |
| 3.6 | |
| 12 | |
| 42 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7137DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 6250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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