| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 40 | |
| ±20 | |
| 3 | |
| 6 | |
| 32@10V | |
| 5.5@4.5V|12.5@10V | |
| 12.5 | |
| 2 | |
| 2 | |
| 670@20V | |
| 90 | |
| 2500 | |
| 5|7 | |
| 142|57 | |
| 16|19 | |
| 9|16 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 25@10V|31@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Create an effective common drain amplifier using this SI7216DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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