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VishaySI7252DP-T1-GE3MOSFETs
Trans MOSFET N-CH 100V 36.7A 8-Pin PowerPAK SO EP T/R
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 36.7 | |
| 100 | |
| 1 | |
| 18@10V | |
| 13.4@7.5V|17.5@10V | |
| 17.5 | |
| 1170@50V | |
| 3500 | |
| 7 | |
| 13|12 | |
| 18|20 | |
| 8|12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 |
This SI7252DP-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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