| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 18 | |
| 58@10V | |
| 13@10V | |
| 13 | |
| 750@50V | |
| 3800 | |
| 10 | |
| 10 | |
| 12 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7322DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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