| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 30 | |
| 100 | |
| 1 | |
| 3@10V | |
| 36@4.5V | |
| 10@4.5V | |
| 18 | |
| 5600@15V | |
| 415@15V | |
| 1 | |
| 860 | |
| 5400 | |
| 32 | |
| 16 | |
| 90 | |
| 24 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.4@10V|3.1@4.5V | |
| 5.4 | |
| 70 | |
| 65 | |
| 0.72 | |
| 3.4 | |
| 45 | |
| 1.1 | |
| 0.6 | |
| 2 | |
| 20 | |
| 30 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7336ADP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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