VishaySI7370DP-T1-GE3MOSFETs
SI7370DP-T1-GE3 Vishay MOSFETs Transistor N-CH 60V 9.6A 8-Pin PowerPAK SO T/R - Arrow.com
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 9.6 | |
| 100 | |
| 1 | |
| 11@10V | |
| 46@10V | |
| 46 | |
| 5200 | |
| 30 | |
| 12 | |
| 50 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this SI7370DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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