| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 7@10V | |
| 11.5@4.5V | |
| 3 | |
| 5.8 | |
| 1.5 | |
| 5000 | |
| 10 | |
| 9 | |
| 35 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.8@10V|7.8@4.5V | |
| 5 | |
| 50 | |
| 70 | |
| 0.78 | |
| 3.4 | |
| 25 | |
| 1.1 | |
| 0.8 | |
| 2 | |
| 2.5 | |
| 20 | |
| 19 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI7386DP-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 1800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.

