| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 7@10V | |
| 11.5@4.5V | |
| 3 | |
| 5.8 | |
| 1.5 | |
| 5000 | |
| 10 | |
| 9 | |
| 35 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.8@10V|7.8@4.5V | |
| 5 | |
| 50 | |
| 70 | |
| 0.78 | |
| 3.4 | |
| 25 | |
| 1.1 | |
| 0.8 | |
| 2 | |
| 2.5 | |
| 20 | |
| 19 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Compared to traditional transistors, SI7386DP-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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