| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 8.6 | |
| 100 | |
| 1 | |
| 14.5@10V | |
| 121@10V | |
| 121 | |
| 5400 | |
| 90 | |
| 20 | |
| 205 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this SI7461DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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