| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 2.3 | |
| 46 | |
| 100 | |
| 1 | |
| 10@10V | |
| 48.6@4.5V|96@10V | |
| 96 | |
| 4150@20V | |
| 5000 | |
| 11|22 | |
| 14|56 | |
| 56|50 | |
| 15|60 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 5.89 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this SI7463ADP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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