| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 80 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 28 | |
| 100 | |
| 1 | |
| 25@10V | |
| 55@4.5V|105@10V | |
| 105 | |
| 26 | |
| 16 | |
| 110 | |
| 4700@40V | |
| 235@40V | |
| 1 | |
| 320 | |
| 5200 | |
| 100|110 | |
| 220|25 | |
| 95|105 | |
| 45|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 21@10V|24@4.5V | |
| 5.2 | |
| 40 | |
| 65 | |
| 0.8 | |
| 3.2 | |
| 55 | |
| 1.2 | |
| 20 | |
| 10.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7469DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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