| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 18 | |
| 25@10V | |
| 21@4.5V|41@10V | |
| 41 | |
| 1980@20V | |
| 3700 | |
| 12|9 | |
| 150|11 | |
| 28|30 | |
| 47|10 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SI7611DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C.
| EDA / CAD Models |
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