| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 2.5 | |
| 35 | |
| 12.3@10V | |
| 20.5@4.5V|39@10V | |
| 39 | |
| 11 | |
| 6 | |
| 30 | |
| 1800@15V | |
| 370 | |
| 3700 | |
| 9|11 | |
| 9|43 | |
| 32|30 | |
| 11|40 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10.3@10V|18.5@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Increase the current or voltage in your circuit with this SI7617DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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