| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.2 | |
| 100 | |
| 1 | |
| 135@10V | |
| 20@10V | |
| 20 | |
| 4.7 | |
| 2.7 | |
| 100 | |
| 1 | |
| 3800 | |
| 15 | |
| 10 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 10 | |
| 0.78 | |
| 50 | |
| 1.2 | |
| 0.8 | |
| 2.6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
Create an effective common drain amplifier using this SI7818DN-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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