| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 2(Min) | |
| -55 to 150 | |
| 7.6 | |
| 100 | |
| 1 | |
| 16.5@10V | |
| 34@10V | |
| 34 | |
| 11 | |
| 7.5 | |
| 2 | |
| 230 | |
| 5200 | |
| 31 | |
| 11 | |
| 40 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 13.5@10V|17.5@6V | |
| 5.2 | |
| 50 | |
| 65 | |
| 0.75 | |
| 4.5 | |
| 45 | |
| 1.1 | |
| 0.1 | |
| 1 | |
| 20 | |
| 12.5 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02 mm |
| Verpackungsbreite | 5.89 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK SO EP |
| 8 | |
| Leitungsform | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The SI7852DP-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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