VishaySI7922DN-T1-GE3MOSFETs
Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 100 | |
| ±20 | |
| 1.8 | |
| 195@10V | |
| 5.2@10V | |
| 5.2 | |
| 1300 | |
| 11 | |
| 11 | |
| 8 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.07(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | PowerPAK 1212 EP |
| 8 | |
| Leitungsform | No Lead |
This SI7922DN-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 1300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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