| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 8 | |
| ±5 | |
| 0.8 | |
| 16 | |
| 100 | |
| 1 | |
| 23@4.5V | |
| 17@4.5V | |
| 1470@4V | |
| 2770 | |
| 10 | |
| 15 | |
| 40 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.3 mm |
| Verpackungsbreite | 0.96 mm |
| Verpackungslänge | 1.46 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | Micro Foot |
| 6 | |
| Leitungsform | Ball |
Create an effective common drain amplifier using this SI8416DB-T2-E1 power MOSFET from Vishay. Its maximum power dissipation is 2770 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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