| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±10 | |
| 0.8 | |
| 16 | |
| 100 | |
| 1 | |
| 26@4.5V | |
| 21@4.5V|43@10V | |
| 43 | |
| 1840@6V | |
| 2770 | |
| 10 | |
| 25 | |
| 40 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.3 |
| Verpackungsbreite | 0.96 |
| Verpackungslänge | 1.46 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | Micro Foot |
| 6 |
This SI8483DB-T2-E1 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2770 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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