| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 2.9 | |
| 100 | |
| 1 | |
| 76@4.5V | |
| 7.5@4.5V|12.5@8V | |
| 615@10V | |
| 900 | |
| 22|23 | |
| 20|10 | |
| 52|60 | |
| 20|6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.2 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 0.8 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | Micro Foot |
| 4 | |
| Leitungsform | Ball |
Make an effective common gate amplifier using this SI8817DB-T2-E1 power MOSFET from Vishay. Its maximum power dissipation is 900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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