| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 4.1 | |
| 100 | |
| 1 | |
| 42@10V | |
| 16@10V | |
| 16 | |
| 4.5 | |
| 2.3 | |
| 1 | |
| 120 | |
| 2500 | |
| 30 | |
| 14 | |
| 42 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 33@10V|43@6V|56@4.5V | |
| 2.5 | |
| 30 | |
| 95 | |
| 0.8 | |
| 3.2 | |
| 30 | |
| 1.1 | |
| 20 | |
| 4.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI9435BDY-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.