| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 8 | |
| 100 | |
| 1 | |
| 18@4.5V | |
| 10@4.5V|22@10V | |
| 22 | |
| 1.7 | |
| 2.5 | |
| 10 | |
| 1200@10V | |
| 220 | |
| 2000 | |
| 10|12 | |
| 10|12 | |
| 25|35 | |
| 10|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 15@4.5V|17@2.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI9926CDY-T1-GE3 power MOSFET. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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