VishaySIA416DJ-T1-GE3MOSFETs
Trans MOSFET N-CH 100V 11.3A 6-Pin PowerPAK SC-70 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 11.3 | |
| 100 | |
| 1 | |
| 83@10V | |
| 3.5@4.5V|6.5@10V | |
| 6.5 | |
| 1.9 | |
| 1.2 | |
| 30 | |
| 295@50V | |
| 16@50V | |
| 1.6 | |
| 92 | |
| 3500 | |
| 25 | |
| 100 | |
| 15 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 68@10V|92@4.5V | |
| 3.5 | |
| 15 | |
| 80 | |
| 0.85 | |
| 3.75 | |
| 30 | |
| 1.2 | |
| 0.4 | |
| 3.6 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.73 |
| Verpackungsbreite | 2.05 |
| Verpackungslänge | 2.05 |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 EP |
| 6 |
Make an effective common source amplifier using this SIA416DJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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