| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 0.85 | |
| 12 | |
| 100 | |
| 1 | |
| 13.5@4.5V | |
| 31@4.5V|52@8V | |
| 2880@6V | |
| 3500 | |
| 20|25 | |
| 30|10 | |
| 60|65 | |
| 12|30 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 mm |
| Verpackungsbreite | 2.05 mm |
| Verpackungslänge | 2.05 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 |
| 6 | |
| Leitungsform | No Lead |
Increase the current or voltage in your circuit with this SIA447DJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3500 mW. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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