| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 21@10V | |
| 14@4.5V|29@10V | |
| 29 | |
| 4.8 | |
| 4.4 | |
| 10 | |
| 1550@15V | |
| 150@15V | |
| 1 | |
| 175 | |
| 3500 | |
| 8|9 | |
| 30|10 | |
| 25|27 | |
| 37|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 16@10V|24@4.5V | |
| 3.5 | |
| 40 | |
| 80 | |
| 0.8 | |
| 2.8 | |
| 17 | |
| 1.2 | |
| 0.7 | |
| 7.4 | |
| 20 | |
| 10 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.73 |
| Verpackungsbreite | 2.05 |
| Verpackungslänge | 2.05 |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 EP |
| 6 | |
| Leitungsform | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SIA483DJ-T1-GE3 power MOSFET. Its maximum power dissipation is 3500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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