VishaySIA533EDJ-T1-GE3MOSFETs
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| 0.18um | |
| Enhancement | |
| N|P | |
| 2 | |
| 12 | |
| ±8 | |
| 1 | |
| 4.5 | |
| 500 | |
| 1 | |
| 34@4.5V@N Channel|59@4.5V@P Channel | |
| 10@10V|5.6@4.5V@N Channel|13@10V|7.8@4.5V@P Channel | |
| 10@N Channel|13@P Channel | |
| 420@6V@N Channel|545@6V@P Channel | |
| 1900 | |
| 10@N Channel|10@P Channel | |
| 10@N Channel|15@P Channel | |
| 20@N Channel|25@P Channel | |
| 10@N Channel|15@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2.05 mm |
| Verpackungslänge | 2.05 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 EP |
| 6 |
Amplify electronic signals and switch between them with the help of Vishay's SIA533EDJ-T1-GE3 power MOSFET. Its maximum power dissipation is 1900 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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