| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.3 | |
| 4.5 | |
| 10000 | |
| 1 | |
| 65@10V | |
| 6.6@4.5V|14@10V | |
| 14 | |
| 600@15V | |
| 1900 | |
| 7|10 | |
| 20|10 | |
| 23|25 | |
| 10|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2.05 mm |
| Verpackungslänge | 2.05 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 |
| 6 | |
| Leitungsform | No Lead |
Compared to traditional transistors, SIA817EDJ-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.