| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±12 | |
| 1.4 | |
| 4.5 | |
| 500 | |
| 1 | |
| 57@4.5V | |
| 7.1@4.5V|15@10V | |
| 15 | |
| 1900 | |
| 10 | |
| 15 | |
| 30 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 mm |
| Verpackungsbreite | 2.05 mm |
| Verpackungslänge | 2.05 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 |
| 6 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this SIA907EDJT-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.