| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 12 | |
| ±8 | |
| 4.5 | |
| 41@4.5V | |
| 10.5@4.5V|17@8V | |
| 1500@6V | |
| 1900 | |
| 15 | |
| 22 | |
| 32 | |
| 22 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 mm |
| Verpackungsbreite | 2.05 mm |
| Verpackungslänge | 2.05 mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | PowerPAK SC-70 |
| 6 |
Increase the current or voltage in your circuit with this SIA975DJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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